gan hemt cross-section 3d model

A 3D isometric cross-sectional diagram of a GaN HEMT device showing layered semiconductor structure (substrate, buffer, GaN channel, AlGaN barrier) with depth and shadow. Include three top metal contacts labeled inside as "Source", "Gate", and "Drain". Highlight the 2DEG layer with glowing electron particles. Use clean, minimal colors and a modern scientific visualization style, suitable for presentation and animation.